A W-Band Power Amplifier Design for Radar Transmitter Using 28-nm CMOS Process
نویسندگان
چکیده
In this paper, we present a W-band power amplifier using 28-nm CMOS process for radar applications. The designed consists of two-stage driver and last-stage amplifier. uses differential common-source topology, the adopts cascode topology. Both utilize neutralization technique at stage stability sufficient gain. Each interstage used transformer impedance matching. signal applied to first driving is supplied 14 GHz 16 external source multiplied by 6 internal multiplier, achieved 14.9 dBm output power, 3-stage consumed 262 mW DC power. 1 dB-bandwidth 10 from 85 95 GHz. core size 110 μm × 300 μm.
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ژورنال
عنوان ژورنال: The Journal of Korean Institute of Electromagnetic Engineering and Science
سال: 2022
ISSN: ['2288-226X', '1226-3133']
DOI: https://doi.org/10.5515/kjkiees.2022.33.11.849